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| E 1010 HEXFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated (R) Power MOSFET VDSS = 60V ID = 84A RDS(ON) =13m Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance Pin1-Gate Pin2-Drain Pin3-Source Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C Max. Units Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt . Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew 84. 59 330 170 1.4 20 50 17 4.0 -55 to + 175 C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) W W/C V A mJ V/ns A IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG 1 HEXFET Thermal Resistance Parameter Typ. --- 0.50 --- (R) E 1010 Power MOSFET Max. 0.75 --- 62 Units C/W RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS RDS(on) VGS(th) Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage current Gate-to-Source Forward leakage Gate-to-Source Reverse leakage Total Gate Charge Gate-to-Source charge Gate-to-Drain ("Miller") charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance 60 -- -- 2.0 20 -- -- -- -- -- -- -- -- -- -- -- -- -- 0.064 -- -- 13 4.0 -- 25 250 100 -100 130 28 44 -- -- -- -- -- V VGS=0V,ID=250uA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V/C Reference to 25C,ID=1mA m VGS=10V,ID=50A V S A nA VDS=25V,ID=50A VDS=60V,VGS=0V VDS=48V,VGS=0V,TJ=150C VGS=20V VGS=-20V VDS=VGS, ID=250A -- -- -- -- -- -- -- -- -- -- 12 78 48 53 4.5 gfs IDSS IGSS Qg Qgs Qgd ID=50A nC VDS=48V VGS=10V See Fig.6 and 13 VDD=30V ID=50A nS RG=3.6 VGS =10V See Figure 10 Between lead, 6mm(0.25in.) nH from package and center of die contact VGS=0V pF VDS=25V f=1.0MHZ See Figure 5 mJ IAS = 50A, L = 260H td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy. -- 7.5 -- -- 3210 -- -- -- -- 690 140 -- -- 1180 320 2 HEXFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units (R) E 1010 Power MOSFET Test Conditions IS Continuous Source Current (Body Diode) . . -- -- -- -- -- -- -- -- 73 220 84 A 330 1.3 110 330 V nS C Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge MOSFET symbol showing the integral reverse p-n junction diode. TJ=25C,IS=50A,VGS=0V TJ=25C,IF=50A di/dt=100A/s ton Forward Turn-on Time Notes: max. junction temperature. 2. Starting TJ = 25C, L = 260H RG = 25W, IAS = 50A, VGS =10V Intrinsic turn-on time is neglegible (turn-on is dominated by Ls + LD) 4. Pulse width400s; duty cycle 2%. 5. This is a typical value at device destruction and represents operation outside rated limits. 6. This is a calculated value limited to TJ = 175C . 7.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 1. Repetitive rating; pulse width limited by 3. ISD50A, di/dt230A/s, VDDV(BR)DSS, TJ175C 3 |
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